RJK03E4DPA Datasheet (Renesas Technology) - Silicon N Channel Power MOS FET

RJK03E4DPA, Silicon N Channel Power MOS FET

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Renesa

RJK03E4DPA Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.8 m typ. (at VGS = 8 V)

* Pb-free

* Halogen-free

* Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 5 6 7 8