* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.8 mī typ. (at VGS = 8 V)
* Pb-free
* Halogen-free
* Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 5 6 7 8
RJK03E4DPA Datasheet (132.80 KB)
RJK03E4DPA
Renesas â Technology
132.80 KB
Silicon n channel power mos fet.
Preliminary www.DataSheet4U.com Datasheet RJK03E4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1928-0210 Power Switching Rev..
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Stock and price
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Microchip Technology Inc
|
| MDA3KP6.0CAE3 |
| 0 In Stock |
| Qty : 500 units |
|
Unit Price : $58.18
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| đ Buy Now |
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