Datasheet Details
- Part number
- RJK03E4DPA
- Manufacturer
- Renesas ↗ Technology
- File Size
- 132.80 KB
- Datasheet
- RJK03E4DPA_RenesasTechnology.pdf
- Description
- Silicon N Channel Power MOS FET
RJK03E4DPA Description
Preliminary www.DataSheet4U.com Datasheet RJK03E4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1928-0210 Power Switching Rev..RJK03E4DPA Features
* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.8 m typ. (at VGS = 8 V)RJK03E4DPA Applications
* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law
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