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RJK03E5DPA

Silicon N Channel Power MOS FET

RJK03E5DPA Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.2 m typ. (at VGS = 8 V)

* Pb-free

* Halogen-free

* Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 5 6 7 8

RJK03E5DPA General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK03E5DPA Datasheet (131.95 KB)

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Datasheet Details

Part number:

RJK03E5DPA

Manufacturer:

Renesas ↗ Technology

File Size:

131.95 KB

Description:

Silicon n channel power mos fet.
Preliminary www.DataSheet4U.com Datasheet RJK03E5DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1929-0210 Power Switching Rev..

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RJK03E5DPA Silicon Channel Power MOS FET Renesas Technology

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