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RJK03E3DNS Silicon N Channel Power MOS FET

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Description

Preliminary www.DataSheet4U.com Datasheet RJK03E3DNS Silicon N Channel Power MOS FET Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.0 m typ. (at VGS = 10 V)
* Pb-free
* Halogen-free
* REJ03G1905-0200 Rev.2.00 Apr 06, 2010 Outline RENESAS Package code: PWSN0008JB-A (Package n

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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