RJK03E3DNS Datasheet (Renesas Technology) - Silicon N Channel Power MOS FET

RJK03E3DNS, Silicon N Channel Power MOS FET

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Renesa

RJK03E3DNS Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.0 m typ. (at VGS = 10 V)

* Pb-free

* Halogen-free

* REJ03G1905-0200 Rev.2.00 Apr 06, 2010 Outline RENESAS Package code: PWSN0008JB-A (Package n