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RQG1001UPAQF Datasheet - Renesas Technology

NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier

RQG1001UPAQF Features

* Ideal for LNA applications. e.g. Tuner, Wireless LAN, Cordless phone and etc.

* High gain and low noise. MSG = 25 dB typ., NF = 0.65 dB typ. at VCE = 2 V, IC = 5 mA, f = 0.9 GHz MSG = 22 dB typ., NF = 0.75 dB typ. at VCE = 2 V, IC = 5 mA, f = 1.8 GHz MSG = 21 dB typ., NF = 0.85 dB

RQG1001UPAQF Datasheet (339.64 KB)

Preview of RQG1001UPAQF PDF

Datasheet Details

Part number:

RQG1001UPAQF

Manufacturer:

Renesas ↗ Technology

File Size:

339.64 KB

Description:

Npn silicon germanium transistor high frequency low noise amplifier.

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RQG1001UPAQF NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier Renesas Technology

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