RQG1001UPAQF NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier

Renesas Technology

Description

www.DataSheet4U.com RQG1001UPAQF NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier REJ03G1551-0100 Rev.1.00 Jul 20, 2007 .

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Datasheet Specifications

Part number: RQG1001UPAQF
Manufacturer: Renesas ↗ Technology
File Size: 339.64 KB
Datasheet: RQG1001UPAQF_RenesasTechnology.pdf
Description: NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier

Applications

* e. g. Tuner, Wireless LAN, Cordless phone and etc.
* High gain and low noise. MSG = 25 dB typ. , NF = 0.65 dB typ. at VCE = 2 V, IC = 5 mA, f = 0.9 GHz MSG = 22 dB typ. , NF = 0.75 dB typ. at VCE = 2 V, IC = 5 mA, f = 1.8 GHz MSG = 21 dB typ. , NF = 0.85 dB typ. at VCE = 2 V, IC = 5 mA, f = 2.4

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