Download Datasheet (339.64 KB)
RQG1001UPAQF
Renesas ↗ Technology
339.64 KB
Npn silicon germanium transistor high frequency low noise amplifier.
www.DataSheet4U.com
RQG1001UPAQF
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifie.
r
REJ03G1551-0100 Rev.1.00 Jul 20, 2007
Features
* Ideal for LNA applications. e.g. Tuner, Wireless.
📁 Related Datasheet
RQG1003UQAQF - NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
(Renesas Technology)
..
RQG1003UQAQF
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
REJ03G1538-0100 Rev.1.00 Jul 20, 2007
Features
.
RQG1004UPAQL - NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
(Renesas Technology)
..
RQG1004UPAQL
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
REJ03G1552-0100 Rev.1.00 Jul 20, 2007
Features
.
RQG2001URAQF - NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
(Renesas Technology)
..
RQG2001URAQF
NPN Silicon Germanium Transistor High Frequency Medium Power Amplifier
REJ03G1554-0100 Rev.1.00 Aug 10, 2007
Featur.
RQ-50 - 50W Quad Output Switching Power Supply
(Mean Well)
) ) * + 02 02 2-5 -160 2 - 5 .7 +84
# $ %& ' ( # $ %& ' ( # $ %& ' ( # $ %& ' ( 9 8
, )* , /0 2 ) , )* , , & 2 )
-. -1
3 ) .
RQ1A060ZP - Pch -12V -6A Middle Power MOSFET
(Rohm)
RQ1A060ZP
Pch -12V -6A Middle Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
-12V 23mΩ ±6A 1.5W
lFeatures
1) Low on - resistance. 2) -1.5V D.
RQ1A070ZP - Pch -12V -7A Middle Power MOSFET
(Rohm)
RQ1A070ZP
Pch -12V -7A Middle Power MOSFET
VDSS RDS(on)(Max.)
ID PD
-12V 12mΩ ±7A 1.5W
lFeatures
1) Low on - resistance. 2) Low voltage drive(1.5.
TAGS
Image Gallery
