Datasheet4U Logo Datasheet4U.com

RQG1003UQAQF Datasheet - Renesas Technology

NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier

RQG1003UQAQF Features

* Ideal for LNA applications. e.g. Tuner, Wireless LAN Cordless phone and etc.

* High gain and low noise. MSG = 26 dB typ., NF = 0.55 dB typ. at VCE = 2 V, IC = 10 mA, f = 0.9 GHz MSG = 22 dB typ., NF = 0.65 dB typ. at VCE = 2 V, IC = 10 mA, f = 1.8 GHz MSG = 20 dB typ., NF = 0.75 dB

RQG1003UQAQF Datasheet (342.52 KB)

Preview of RQG1003UQAQF PDF

Datasheet Details

Part number:

RQG1003UQAQF

Manufacturer:

Renesas ↗ Technology

File Size:

342.52 KB

Description:

Npn silicon germanium transistor high frequency low noise amplifier.

📁 Related Datasheet

RQG1001UPAQF NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier (Renesas Technology)

RQG1004UPAQL NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier (Renesas Technology)

RQG2001URAQF NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier (Renesas Technology)

RQ-50 50W Quad Output Switching Power Supply (Mean Well)

RQ1A060ZP Pch -12V -6A Middle Power MOSFET (Rohm)

RQ1A070ZP Pch -12V -7A Middle Power MOSFET (Rohm)

RQ1A070ZPFRA MOSFET (ROHM)

RQ1C065UN Nch 20V 6.5A Middle Power MOSFET (Rohm)

RQ1C075UN 1.5V Drive Nch MOSFET (Rohm)

RQ1C075UNFRA MOSFET (ROHM)

TAGS

RQG1003UQAQF NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier Renesas Technology

Image Gallery

RQG1003UQAQF Datasheet Preview Page 2 RQG1003UQAQF Datasheet Preview Page 3

RQG1003UQAQF Distributor