RQG2001URAQF Datasheet - Renesas Technology

RQG2001URAQF NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier

RQG2001URAQF Features

* Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.

* Low Distortion and Excellent Linearity IP3 at output = +30 dBm typ., P1dB at output = +19 dBm typ., f = 1.8 GHz

* High Transition Frequency fT = 20 GHz typ.

* High Collector to Emitter Vo

Datasheet Details

RQG2001URAQF

271.25 KB

Npn silicon germanium transistor high frequency low noise amplifier.

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