* Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.
* Low Distortion and Excellent Linearity IP3 at output = +30 dBm typ., P1dB at output = +19 dBm typ., f = 1.8 GHz
* High Transition Frequency fT = 20 GHz typ.
* High Collector to Emitter Vo
RQG2001URAQF Datasheet (271.25 KB)
RQG2001URAQF
Renesas ↗ Technology
271.25 KB
Npn silicon germanium transistor high frequency low noise amplifier.
www.DataSheet4U.com RQG2001URAQF NPN Silicon Germanium Transistor High Frequency Medium Power Amplifier REJ03G1554-0100 Rev.1.00 Aug 10, 2007 Featur.
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