RQG2001URAQF NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier

Renesas Technology

Description

www.DataSheet4U.com RQG2001URAQF NPN Silicon Germanium Transistor High Frequency Medium Power Amplifier REJ03G1554-0100 Rev.1.00 Aug 10, 2007 Featur.

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Datasheet Specifications

Part number: RQG2001URAQF
Manufacturer: Renesas ↗ Technology
File Size: 271.25 KB
Datasheet: RQG2001URAQF_RenesasTechnology.pdf
Description: NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier

Applications

* e. g 2.4 GHz WLAN, Digital cordless phone.
* Low Distortion and Excellent Linearity IP3 at output = +30 dBm typ. , P1dB at output = +19 dBm typ. , f = 1.8 GHz
* High Transition Frequency fT = 20 GHz typ.
* High Collector to Emitter Voltage VCEO = 5 V Outline RENESAS Package co

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