Datasheet Details
Part number:
RQG2001URAQF
Manufacturer:
Renesas ↗ Technology
File Size:
271.25 KB
Description:
Npn silicon germanium transistor high frequency low noise amplifier.
RQG2001URAQF_RenesasTechnology.pdf
RQG2001URAQF_RenesasTechnology.pdf
Datasheet Details
Part number:
RQG2001URAQF
Manufacturer:
Renesas ↗ Technology
File Size:
271.25 KB
Description:
Npn silicon germanium transistor high frequency low noise amplifier.
RQG2001URAQF, NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
RQG2001URAQF Features
* Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.
* Low Distortion and Excellent Linearity IP3 at output = +30 dBm typ., P1dB at output = +19 dBm typ., f = 1.8 GHz
* High Transition Frequency fT = 20 GHz typ.
* High Collector to Emitter Vo
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