Part number:
1SS86
Manufacturer:
File Size:
142.39 KB
Description:
Silicon schottky barrier diode.
* Low capacitance. (C = 0.85 pF max)
* High reliability with glass seal. Ordering Information Type No. 1SS86 Cathode band White 2nd band White Mark H Package Name DO-35 Package Code (Previous Code) GRZZ0002ZB-A (DO-35) Pin Arrangement H 1 2 2nd band Cathode band 1. Catho
1SS86
142.39 KB
Silicon schottky barrier diode.
📁 Related Datasheet
1SS81 - Silicon Diode
(Hitachi Semiconductor)
1SS81
Silicon Epitaxial Planar Diode for High Voltage Switching
ADE-208-148A (Z) Rev. 1 Jul. 1995 Features
• High reverse voltage. (VR = 150V) • High.
1SS82 - Silicon Diode
(Hitachi Semiconductor)
1SS82
Silicon Epitaxial Planar Diode for High Voltage Switching
ADE-208-149A (Z) Rev. 1 Jul. 1995 Features
• High reverse voltage. (VR = 200V) • High.
1SS83 - Silicon Diode
(Hitachi Semiconductor)
1SS83
Silicon Epitaxial Planar Diode for High Voltage Switching
ADE-208-150A (Z) Rev. 1 Jul. 1995 Features
• High reverse voltage. (VR = 250V) • High.
1SS86 - Silicon Schottky Barrier Diode
(Hitachi Semiconductor)
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
Th.
1SS88 - Silicon Schottky Barrier Diode
(Hitachi Semiconductor)
1SS88
Silicon Schottky Barrier Diode for CATV Balanced Mixer
ADE-208-187A (Z) Rev. 1 Oct. 2000 Features
• Low capacitance. (C = 0.97 pF max) • High r.
1SS101 - SUPER HIGH SPEED SWITCHING DIODE
(XIN SEMICONDUCTOR)
XIN SEMICONDUCTOR
ISO9002
1SS101 THUR 1SS301
SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY
FEATURES
For general purpo.
1SS101 - Mixer Diode
(NEC)
.
1SS104 - SILICON DIODE
(Toshiba Semiconductor)
.
