Part number:
1SS119
Manufacturer:
File Size:
201.48 KB
Description:
Silicon epitaxial planar diode.
* Low capacitance. (C = 3.0 pF max)
* Short reverse recovery time. (trr = 3.5 ns max)
* Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS119 Cathode band Light Blue Package Name MHD Package Code (Previous Code) GRZZ0002ZC
1SS119
201.48 KB
Silicon epitaxial planar diode.
📁 Related Datasheet
1SS110 - Silicon Diode
(Hitachi Semiconductor)
1SS110
Silicon Epitaxial Planar Diode for Tuner Band Switch
ADE-208-179B (Z) Rev. 2 Features
• Low forward resistance. (r f = 0.9 Ω max) • Suitable f.
1SS110 - Switching Diode
(Leshan Radio Company)
..
Switching Diode
*150mW DO-34 * Glass silicon switching diodes * We declare that the material of product pliance with RoHS requ.
1SS118 - Silicon Epitaxial Planar Diode
(Hitachi Semiconductor)
..
1SS118
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-297 (Z) Rev. 0 Features
• High average forward current. (.
1SS119 - Silicon Diode
(Hitachi Semiconductor)
1SS119
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-180A (Z) Rev. 1 Aug. 1995 Features
• Low capacitance. (C = 3.0pF max) • Short .
1SS101 - SUPER HIGH SPEED SWITCHING DIODE
(XIN SEMICONDUCTOR)
XIN SEMICONDUCTOR
ISO9002
1SS101 THUR 1SS301
SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY
FEATURES
For general purpo.
1SS101 - Mixer Diode
(NEC)
.
1SS104 - SILICON DIODE
(Toshiba Semiconductor)
.
1SS106 - Silicon Schottky Barrier Diode
(Hitachi Semiconductor)
1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-153A (Z) Rev. 1 Oct. 1998 Features
• Detection efficiency is.