* a (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 Free Datasheet http://www.datasheet4u.com/
2SD1163
163.38 KB
Silicon npn transistor.
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
Th.
📁 Related Datasheet
2SD1160 - NPN TRANSISTOR
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SD1160
Switching Applications Suitable for Motor Drive Applications
2SD1160
Unit: mm
• .
2SD1162 - Silicon NPN Darlington Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
2SD1162
DESCRIPTION ·High DC Current Gain-
: hFE= 400(Min.)@IC= 2A ·High Switching Speed ·Low Collector .
2SD1163 - NPN TRANSISTOR
(Hitachi Semiconductor)
2SD1163, 2SD1163A
Silicon NPN Triple Diffused
Application
TV horizontal deflection output
Outline
TO-220AB
1
2 3
1. Base 2. Collector (Flange) 3..
2SD1163 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector Current: IC= 7A ·Collector-Emitter BreakdownVoltage-
: V(BR)CEO= 120V(Min.) ·Minimum Lot-to-L.
2SD1163 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1163,2SD1163A
·Wit
..
DESCRIPTION h TO-220 package.
2SD1163 - NPN Silicon Epitaxial Power Transistor
(Thinki Semiconductor)
2SD1163/2SD1163A
®
Pb Free Plating Product
2SD1163/2SD1163A
Pb
NPN Silicon Epitaxial Power Transistor
FEATURES:
* Medium Power Linear Switching A.
2SD1163A - NPN TRANSISTOR
(Hitachi Semiconductor)
2SD1163, 2SD1163A
Silicon NPN Triple Diffused
Application
TV horizontal deflection output
Outline
TO-220AB
1
2 3
1. Base 2. Collector (Flange) 3..
2SD1163A - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector Current: IC= 7A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·100% avalanche t.
