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2SK3209 - Silicon N-Channel MOSFET

2SK3209 Description

2SK3209 Silicon N Channel MOS FET High Speed Power Switching .

2SK3209 Features

* Low on-resistance RDS = 40 mΩ typ.
* High speed switching
* 4 V gate drive device can be driven from 5 V source Outline REJ03G1090-0300 (Previous: ADE-208-759A) Target Specification Rev.3.00 Sep 07, 2005 RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1.

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Silicon N-Channel MOSFET Renesas
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