Datasheet4U Logo Datasheet4U.com

2SK3235 - Silicon N-Channel MOSFET

2SK3235 Description

www.DataSheet4U.com To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesa.

2SK3235 Features

* Low on-resistance: R DS(on) = 0.3 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 50 ns typ (at VGS = 10 V, VDD = 250 V, ID = 7.5 A) Low gate charge: Qg = 48 nC typ (at VDD = 400 V, VGS = 10 V, ID = 15 A) Avala

📥 Download Datasheet

Preview of 2SK3235 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • 2SK3230 - N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR (NEC)
  • 2SK3230B - N-Channel MOSFET (NEC)
  • 2SK3230C - MOSFET (NEC)
  • 2SK3233 - N-Channel MOSFET (Hitachi Semiconductor)
  • 2SK3234 - MOSFET (Hitachi Semiconductor)
  • 2SK3236 - N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK3239 - Silicon N-Channel MOSFET (Renesas Technology)
  • 2SK3239L - Silicon N-Channel MOSFET (Renesas Technology)

📌 All Tags

Renesas 2SK3235-like datasheet