* Compact package
* High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA)
* Includes diode and high resistance at G - S 1.0 1.6 ± 0.1 0.8 ± 0.1 G D S ORDERING INFORMATION 2SK3230 SC-89 (TUSM) 0.5 ± 0.05 1.6 ± 0.1 PART NUMBER PACKAGE
2SK3230
NEC
76.60 KB
N-channel silicon junction field effect transistor.
www.DataSheet4U.com
DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK3230
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER .
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Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesa.
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