* Low On-State Resistance RDS(on)1 = 40 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A)
* Low Ciss : Ciss = 790 pF TYP.
* Built-in Gate Protection Diode
* TO-251/TO-252 package ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Volta
2SK3224
NEC
39.84 KB
N-channel mosfet.
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3224 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3224 2SK3224-Z P.
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