2SK322 Datasheet - Hitachi Semiconductor

2SK322 N-Channel MOSFET

2SK322 Silicon N-Channel Junction FET Application HF wide band amplifier Outline MPAK 3 1 2 1. Drain 2. Source 3. Gate 2SK322 Absolute Maximum Ratings (Ta = 25°C) Item Gate to drain voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VGDO VGSO ID IG Pch Tch Tstg Ratings 15 15 50 5 150 150 55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Gate to drain break.

2SK322_HitachiSemiconductor.pdf