2SK3229 N-Channel MOSFET

Hitachi Semiconductor

Description

2SK3229 Silicon N Channel MOS FET High Speed Power Switching ADE-208-766(Z) Target specification 1st.Edition December 1998 .

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Datasheet Specifications

Part number: 2SK3229
Manufacturer: Hitachi Semiconductor
File Size: 26.45 KB
Datasheet: 2SK3229_HitachiSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Low on-resistance R DS(on) =6mΩ typ.
* Low drive current
* 4V gate drive device can be driven from 5V source Outline TO
* 220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK3229 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source volt

2SK3229 Distributors

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2SK3229 N-Channel MOSFET Hitachi Semiconductor

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