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2SK3229 - N-Channel MOSFET

2SK3229 Description

2SK3229 Silicon N Channel MOS FET High Speed Power Switching ADE-208-766(Z) Target specification 1st.Edition December 1998 .

2SK3229 Features

* Low on-resistance R DS(on) =6mΩ typ.
* Low drive current
* 4V gate drive device can be driven from 5V source Outline TO
* 220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK3229 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source volt

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Datasheet Details

Part number
2SK3229
Manufacturer
Hitachi Semiconductor
File Size
26.45 KB
Datasheet
2SK3229_HitachiSemiconductor.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET Hitachi Semiconductor
Hitachi Semiconductor 2SK3229-like datasheet