2SK3229 Datasheet - Hitachi Semiconductor

2SK3229, N-Channel MOSFET

2SK3229 Silicon N Channel MOS FET High Speed Power Switching ADE-208-766(Z) Target specification 1st.Edition December 1998 .

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Datasheet Details

Part number:

2SK3229

Manufacturer:

Hitachi Semiconductor

File Size:

26.45 KB

Description:

N-Channel MOSFET

Features

* Low on-resistance R DS(on) =6mΩ typ.
* Low drive current
* 4V gate drive device can be driven from 5V source Outline TO
* 220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK3229 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source volt

2SK3229 Distributors

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2SK3229 N-Channel MOSFET Hitachi Semiconductor

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