2SK3230C Datasheet - NEC

2SK3230C - MOSFET

The 2SK3230C contains a diode and high resistivity between its gates and sources, for achieving short stability PACKAGE DRAWING (Unit: mm) 0.3 ±0.05 0.4 0.1 *0.05 +0.1 time during power-on. In addition, because of its compact 1.6 ±0.1 for compact ECMs for audio or mobile devices such as .

2SK3230C Features

* Low noise:

* 108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)

* Containing a diode and high resistivity, short stability time is achieved during power-on.

* Small package: SC-89 (TUSM) 0.5 ±0.05 0.5 0.5 1.6 ±0.1 0.2 +0.1

* 0 ORDERING INFORMATION PART NU

2SK3230C_NEC.pdf