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2SK3233 - N-Channel MOSFET

2SK3233 Description

2SK3233 Silicon N Channel MOS FET High Speed Power Switching ADE-208-1369 (Z) 1st.Edition Mar.2001 .

2SK3233 Features

* Low on-resistance: R DS(on) = 1.1 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A) Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A) Avalan

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Datasheet Details

Part number
2SK3233
Manufacturer
Hitachi Semiconductor
File Size
46.70 KB
Datasheet
2SK3233_HitachiSemiconductor.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET Hitachi Semiconductor
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