Part number:
2SK3211S
Manufacturer:
File Size:
85.48 KB
Description:
Silicon n-channel mosfet.
* Low on-resistance RDS = 60 mΩ typ.
* High speed switching
* 4 V gate drive device can be driven from 5 V source REJ03G1091-0400 Rev.4.00 May 15, 2006 Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 RENESAS Package code: PRSS0004AE-B (Package name:
2SK3211S
85.48 KB
Silicon n-channel mosfet.
📁 Related Datasheet
2SK3211 - N-Channel MOSFET
(Hitachi Semiconductor)
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-761A (Z) 2nd. Edition February 1999 Features
• • • Low on-resista.
2SK3211 - Silicon N-Channel MOSFET
(Renesas)
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 60 mΩ typ.
• High speed switching • 4 V.
2SK3211L - N-Channel MOSFET
(Hitachi Semiconductor)
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-761A (Z) 2nd. Edition February 1999 Features
• • • Low on-resista.
2SK3211L - Silicon N-Channel MOSFET
(Renesas)
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 60 mΩ typ.
• High speed switching • 4 V.
2SK3211S - N-Channel MOSFET
(Hitachi Semiconductor)
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-761A (Z) 2nd. Edition February 1999 Features
• • • Low on-resista.
2SK321 - N-Channel MOSFET
(Panasonic Semiconductor)
.
2SK3212 - N-Channel MOSFET
(Hitachi Semiconductor)
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Silicon N Channel MOS FET High Speed Power Switching
ADE-208-752 (Z) 1st. Edition February 1999 Features
• Low on-resistance R DS = 0.1 Ω typ.
2SK3212 - Silicon N-Channel MOSFET
(Renesas)
2SK3212
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =0.1 Ω typ.
• High speed switching • 4 V gate drive devi.
