Part number:
2SK3511
Manufacturer:
File Size:
142.49 KB
Description:
Mosfet.
* Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
* Low Ciss: Ciss = 5900 pF TYP.
* Built-in gate protection diode 2SK3511-ZJ 2SK3511-Z Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to
2SK3511
142.49 KB
Mosfet.
📁 Related Datasheet
2SK351 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK351
FEATURES ·Drain Current : ID= 5A@ TC=25℃ ·Drain Source Voltage
: VDSS= 800V(Min) ·Static Drain-Source On-Resi.
2SK351 - Silicon N-Channel MOSFET
(Hitachi)
OEM: Hitachi
MOSFET Transistor 2SK351 / K351
Datasheet
Datasheet Rev. 2.0 – 09/19 – data without warranty / liability
OEM: Hitachi
MOSFET Transis.
2SK3510 - N-Channel Power MOSFET
(Renesas)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3510
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor
des.
2SK3511 - MOSFET
(Kexin)
SMD Type
MOSFET
MOS Field Effect Transistor 2SK3511
TO-263
+0.1 1.27-0.1
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Features
Super low on-state resistan.
2SK3512-01L - N-Channel MOSFET
(Fuji Electric)
2SK3512-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
Super FAP-G Series
Features
High speed switching Low on-resistance.
2SK3512-S - N-Channel MOSFET
(Fuji Electric)
2SK3512-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
Super FAP-G Series
Features
High speed switching Low on-resistance.
2SK3512-SJ - N-Channel MOSFET
(Fuji Electric)
2SK3512-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
Super FAP-G Series
Features
High speed switching Low on-resistance.
2SK3513-01L - N-CHANNEL SILICON POWER MOSFET
(Fuji Electric)
..
2SK3513-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
200303
Super FAP-G Series
Features
High .