* Enhanced N channel FET with no inherent diode to Vcc
* Very low ON resistance (5Ω typical)
* Zero propagation delay, zero added ground bounce
* Fast turn-on/turn-off time
* Undershoot clamp diodes on all switch and control inputs
* Available in SOIC
IDTQS3306A Datasheet (343.46 KB)
IDTQS3306A
343.46 KB
High-speed cmos dual bus switch.
IDTQS3306A HIGH-SPEED CMOS DUAL BUS SWITCH WITH INDIVIDUAL ENABLES INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH® PRODUCTS HIGH-SPEED CMOS DUAL BUS SWITC.
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