NP110N04PDG N-CHANNEL POWER MOS FET

Renesas

Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N04PDG SWITCHING N-CHANNEL POWER MOS FET .
The NP110N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

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Datasheet Specifications

Part number: NP110N04PDG
Manufacturer: Renesas ↗
File Size: 165.43 KB
Datasheet: NP110N04PDG-Renesas.pdf
Description: N-CHANNEL POWER MOS FET

Features

* Channel temperature 175 degree rating
* Super low on-state resistance RDS(on)1 = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.2 mΩ MAX. (VGS = 4.5 V, ID = 55 A) (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 Gate to Source Voltag

NP110N04PDG Distributors

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NP110N04PDG N-CHANNEL POWER MOS FET Renesas

Renesas NP110N04PDG-like datasheet