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NP110N04PDG - N-CHANNEL POWER MOS FET

Renesas

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Datasheet Details

Part number	NP110N04PDG
Manufacturer	Renesas
File Size	165.43 KB
Description	N-CHANNEL POWER MOS FET
Datasheet	NP110N04PDG-Renesas.pdf

NP110N04PDG Product details

Description

The NP110N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

Channel temperature 175 degree rating.
Super low on-state resistance RDS(on)1 = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.2 mΩ MAX. (VGS = 4.5 V, ID = 55 A) (TO-263).

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Published: Oct 12, 2015 |