NP110N04PDG Datasheet, Fet, Renesas

NP110N04PDG Features

• Fet
• Channel temperature 175 degree rating
• Super low on-state resistance RDS(on)1 = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.2 mΩ MAX. (VGS = 4.5 V, ID = 55 A) (

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Part number:

NP110N04PDG

Manufacturer:

Renesas ↗

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📄 Datasheet

Description:

N-channel power mos fet. The NP110N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION

NP110N04PDG Application

• Applications ORDERING INFORMATION PART NUMBER LEAD PLATING NP110N04PDG-E1-AZ Note Pure Sn (Tin) NP110N04PDG-E2-AZ Note Note See “TAPE I

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