NP110N04PDG - N-CHANNEL POWER MOS FET
The NP110N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
NP110N04PDG Features
* Channel temperature 175 degree rating
* Super low on-state resistance RDS(on)1 = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.2 mΩ MAX. (VGS = 4.5 V, ID = 55 A) (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 Gate to Source Voltag