NP110N04PDG Datasheet - Renesas

NP110N04PDG N-CHANNEL POWER MOS FET

The NP110N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING NP110N04PDG-E1-AZ Note Pure Sn (Tin) NP110N04PDG-E2-AZ Note Note See “TAPE INFORMATION” PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25.

NP110N04PDG Features

* Channel temperature 175 degree rating

* Super low on-state resistance RDS(on)1 = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.2 mΩ MAX. (VGS = 4.5 V, ID = 55 A) (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 Gate to Source Voltag

NP110N04PDG-Renesas.pdf