NP110N055PUJ Datasheet - Renesas

NP110N055PUJ N-CHANNEL POWER MOS FET

The NP110N055PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP110N055PUJ-E1B-AY Note NP110N055PUJ-E2B-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tape 1000 p/reel Note Pb-free (This product does not contain Pb in ex.

NP110N055PUJ Features

* Super low on-state resistance RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 55 A)

* Low input capacitance Ciss = 9500 pF TYP.

* Designed for automotive application and AEC-Q101 qualified (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 5

NP110N055PUJ-Renesas.pdf