* Super low on-state resistance RDS(on) = 2.15 mΩ MAX. (VGS = 10 V, ID = 60 A)
* Low Ciss: Ciss = 7400 pF TYP. (VDS = 25 V)
* Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. Lead Plating Packing NP119N04NUK-S18-AY
* 1 Pure Sn (
NP119N04NUK Datasheet (190.11 KB)
NP119N04NUK
190.11 KB
N-channel mosfet.
Preliminary Data Sheet
NP119N04NUK
40 V
* 120 A
* N-channel Power MOS FET Application: Automotive
R07DS1252EJ0100 Rev.1.00
Mar 30, 2.
📁 Related Datasheet
NP110N03PUG N-CHANNEL POWER MOS FET (Renesas)
NP110N04PDG N-CHANNEL POWER MOS FET (Renesas)
NP110N04PUK N-Channel MOSFET (Renesas)
NP110N055PUG N-CHANNEL POWER MOS FET (Renesas)
NP110N055PUJ N-CHANNEL POWER MOS FET (Renesas)
NP110N055PUK N-Channel MOSFET (Renesas)
NP100N04NUJ MOS FIELD EFFECT TRANSISTOR (Renesas)
NP100N04PUK MOS FIELD EFFECT TRANSISTOR (Renesas)
NP100N055PUK MOS FIELD EFFECT TRANSISTOR (Renesas)
NP100P02D6 20V P-Channel Enhancement Mode MOSFET (natlinear)
