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NP23N06YDG N-Channel Power MOSFET

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Description

NP23N06YDG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0014EJ0100 Rev.1.00 Jul 01, 2010 .
The NP23N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications. Low on-state resistance ⎯.

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Features

* Low on-state resistance ⎯ RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A)
* Low Ciss: Ciss = 1200 pF TYP. (VDS = 25 V, VGS = 0 V)
* Logic level drive type

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