NP29N06QDK Dual N-channel Power MOSFET

Renesas

Description

Data Sheet NP29N06QDK 60 V * 30 A * Dual N-channel Power MOS FET Application: Automotive R07DS1330EJ0200 Rev.2.00 May 24, 2018 Desc.
NP29N06QDK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications. Super low on-state resista.

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Datasheet Specifications

Part number: NP29N06QDK
Manufacturer: Renesas ↗
File Size: 467.17 KB
Datasheet: NP29N06QDK-Renesas.pdf
Description: Dual N-channel Power MOSFET

Features

* Super low on-state resistance  RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 15 A)  RDS(on)2 = 30 m MAX. (VGS = 4.5 V, ID = 7.5 A)
* Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V)

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NP29N06QDK Dual N-channel Power MOSFET Renesas

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