NP29N06QDK Datasheet - Renesas

NP29N06QDK Dual N-channel Power MOSFET

NP29N06QDK Features

* Super low on-state resistance  RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 15 A)  RDS(on)2 = 30 m MAX. (VGS = 4.5 V, ID = 7.5 A)

* Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V)

* Designed for automotive application and AEC-Q101 qualified

* Small size package 8-pin HSON dual Outline R

Datasheet Details

NP29N06QDK

467.17 KB

Dual n-channel power mosfet.

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NP29N06QDK Dual N-channel Power MOSFET Renesas

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