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RJH1CV5DPK - IGBT

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Renesas

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RJH1CV5DPK IGBT by Renesas - Datasheet Preview — Datasheet preview – RJH1CV5DPK

Datasheet Details

Part number	RJH1CV5DPK
Manufacturer	Renesas
File Size	166.46 KB
Description	IGBT
Datasheet	RJH1CV5DPK Datasheet
Additional preview pages of the RJH1CV5DPK datasheet.

Product details

Features

Short circuit withstand time (5 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C).
Built-in fast recovery diode (trr = 170 ns typ. ) in one package.
Trench gate and thin wafer technology.
High speed switching tf = 165 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 25 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0746EJ0200 Rev.2.00 Jun 12, 2012 Outline.

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Published: Jul 20, 2012 |