RJH1CV5DPK

IGBT

Renesas

* Short circuit withstand time (5 s typ.)

* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)

* Built-in fast recovery diode (trr = 170 ns typ.) in one package

* Trench gate and thin wafer technology

* High speed switching tf

RJH1CV5DPK

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Igbt.

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