RJH1CV7DPQ-E0 IGBT

Renesas

Description

Preliminary Datasheet RJH1CV7DPQ-E0 1200V - 35A - IGBT Application: Inverter .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: RJH1CV7DPQ-E0
Manufacturer: Renesas ↗
File Size: 110.56 KB
Datasheet: RJH1CV7DPQ-E0_Renesas.pdf
Description: IGBT

Features

* Short circuit withstand time (5 s typ. )
* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25°C)
* Built-in fast recovery diode (trr = 200 ns typ. ) in one package
* Trench gate and thin wafer technology
* High speed switching tf

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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RJH1CV7DPQ-E0 IGBT Renesas

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