RJH1CV7DPQ-E0

IGBT

Renesas

RJH1CV7DPQ-E0 Features

* Short circuit withstand time (5 s typ.)

* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25°C)

* Built-in fast recovery diode (trr = 200 ns typ.) in one package

* Trench gate and thin wafer technology

* High speed switching tf

RJH1CV7DPQ-E0 General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJH1CV7DPQ-E0 Datasheet (110.56 KB)