RJH1CV7DPQ-E0 Datasheet (Renesas)

RJH1CV7DPQ-E0, IGBT

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Renesa

RJH1CV7DPQ-E0 Features

* Short circuit withstand time (5 s typ.)

* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25°C)

* Built-in fast recovery diode (trr = 200 ns typ.) in one package

* Trench gate and thin wafer technology

* High speed switching tf