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RJH1CV7DPK - IGBT

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Renesas

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RJH1CV7DPK IGBT by Renesas - Datasheet Preview — Datasheet preview – RJH1CV7DPK

Datasheet Details

Part number	RJH1CV7DPK
Manufacturer	Renesas
File Size	120.42 KB
Description	IGBT
Datasheet	RJH1CV7DPK Datasheet
Additional preview pages of the RJH1CV7DPK datasheet.

Product details

Features

Short circuit withstand time (5 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25°C).
Built-in fast recovery diode (trr = 200 ns typ. ) in one package.
Trench gate and thin wafer technology.
High speed switching tf = 280 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 35 A, Rg = 5 , Ta = 25°C, inductive load) Outline.

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Published: Jul 20, 2012 |