RJH1CV7DPK

IGBT

Renesas

* Short circuit withstand time (5 s typ.)

* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25°C)

* Built-in fast recovery diode (trr = 200 ns typ.) in one package

* Trench gate and thin wafer technology

* High speed switching tf

RJH1CV7DPK

120.42 KB

Igbt.

📁 Related Datasheet

RJH1CV7DPQ-E0 IGBT (Renesas)

RJH1CV5DPK IGBT (Renesas)

RJH1CV5DPQ-E0 IGBT (Renesas)

RJH1CV6DPK IGBT (Renesas)

RJH1CV6DPQ-E0 IGBT (Renesas)

RJH1CD5DPQ-A0 High Speed Power Switching (Renesas)

RJH1CD5DPQ-E0 IGBT (Renesas)

RJH1CD6DPQ-A0 IGBT (Renesas)

RJH1CD6DPQ-E0 IGBT (Renesas)

RJH1CD7DPQ-A0 IGBT (Renesas)

TAGS

RJH1CV7DPK IGBT Renesas

Image Gallery