Datasheet4U.com

RJH1CV6DPQ-E0 - IGBT

Product Overview

Renesas

📥 Download Datasheet

RJH1CV6DPQ-E0 IGBT by Renesas - Datasheet Preview — Datasheet preview – RJH1CV6DPQ-E0

Datasheet Details

Part number	RJH1CV6DPQ-E0
Manufacturer	Renesas
File Size	165.77 KB
Description	IGBT
Datasheet	RJH1CV6DPQ-E0 Datasheet
Additional preview pages of the RJH1CV6DPQ-E0 datasheet.

Product details

Features

Short circuit withstand time (5 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C).
Built-in fast recovery diode (trr = 180 ns typ. ) in one package.
Trench gate and thin wafer technology.
High speed switching tf = 120 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 30 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0524EJ0500 Rev.5.00 Jun 12, 2012 Outline.

📁 Similar Datasheet

RJH3047 - Silicon N-Channel IGBT High Speed Power Switching (ETC)
RJH3047ADPK - Silicon N-Channel IGBT High Speed Power Switching (ETC)
RJH60C9DPD - Silicon N Channel IGBT (Renesas Technology)
RJH60D0DPK - Silicon N Channel IGBT (Renesas Technology)
RJH60D1DPE - Silicon N Channel IGBT (Renesas Technology)
RJH60D1DPP-M0 - Silicon N-Channel IGBT (Renesas Technology)
RJH60D2DPE - Silicon N Channel IGBT (Renesas Technology)
RJH60D2DPP-M0 - Silicon N Channel IGBT (Renesas Technology)

Other Datasheets by Renesas

RJH1CV6DPK - IGBT
RJH1CV5DPK - IGBT
RJH1CV5DPQ-E0 - IGBT
RJH1CV7DPK - IGBT
RJH1CV7DPQ-E0 - IGBT
RJH1CD5DPQ-A0 - High Speed Power Switching

Published: Jul 20, 2012 |