RJH1CV6DPQ-E0 Datasheet - Renesas

Datasheet Details

Part number:

RJH1CV6DPQ-E0

Manufacturer:

File Size:

165.77 KB

Description:

Igbt.

RJH1CV6DPQ-E0, IGBT

RJH1CV6DPQ-E0 Features

* Short circuit withstand time (5 s typ.)

* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)

* Built-in fast recovery diode (trr = 180 ns typ.) in one package

* Trench gate and thin wafer technology

* High speed switching tf

📁 Related Datasheet

📌 All Tags

Renesas RJH1CV6DPQ-E0-like datasheet