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RJH1CV6DPK - IGBT

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Renesas

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RJH1CV6DPK IGBT by Renesas - Datasheet Preview — Datasheet preview – RJH1CV6DPK

Datasheet Details

Part number	RJH1CV6DPK
Manufacturer	Renesas
File Size	166.36 KB
Description	IGBT
Datasheet	RJH1CV6DPK Datasheet
Additional preview pages of the RJH1CV6DPK datasheet.

Product details

Features

Short circuit withstand time (5 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C).
Built-in fast recovery diode (trr = 180 ns typ. ) in one package.
Trench gate and thin wafer technology.
High speed switching tf = 120 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 30 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0747EJ0200 Rev.2.00 Jun 12, 2012 Outline.

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Published: Jul 20, 2012 |