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RJH1CV6DPK IGBT

RJH1CV6DPK Description

Preliminary Datasheet RJH1CV6DPK 1200V - 30A - IGBT Application: Inverter .

RJH1CV6DPK Features

* Short circuit withstand time (5 s typ. )
* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
* Built-in fast recovery diode (trr = 180 ns typ. ) in one package
* Trench gate and thin wafer technology
* High speed switching tf

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