RJP1CS06DWT

IGBT

Renesas

RJP1CS06DWT Features

* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 100 A, VGE = 15 V, Ta = 25C)

* High speed switching

* Short circuit withstands time (10 s min.) R07DS0829EJ0002 Rev.0.02 Jul 05, 2012 Outline Die: RJP1CS06DWT-80 2 C 3 Wafer: RJP1CS06DWA-80 2 1G 1 3 1.

RJP1CS06DWT General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJP1CS06DWT Datasheet (129.68 KB)