RJP1CS07DWT Datasheet, Igbt, Renesas

RJP1CS07DWT Features

• Igbt
• Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 150 A, VGE = 15 V, Ta = 25C)
• High speed switching
• Short circuit withstands time

PDF File Details

Part number:

RJP1CS07DWT

Manufacturer:

Renesas ↗

File Size:

129.46kb

Download:

📄 Datasheet

Description:

Igbt. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

RJP1CS07DWT Application

• Applications for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipmen

TAGS

RJP1CS07DWT

Renesas

📁 Related Datasheet

RJP1CS07DWA - IGBT (Renesas)
Preliminary Datasheet RJP1CS07DWT/RJP1CS07DWA 1250V - 150A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sa.

RJP1CS03DWA - IGBT (Renesas)
Preliminary Datasheet RJP1CS03DWT/RJP1CS03DWA 1250V - 30A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat.

RJP1CS03DWT - IGBT (Renesas)
Preliminary Datasheet RJP1CS03DWT/RJP1CS03DWA 1250V - 30A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat.

RJP1CS04DWA - IGBT (Renesas)
Preliminary Datasheet RJP1CS04DWT/RJP1CS04DWA 1250V - 50A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat.

RJP1CS04DWT - IGBT (Renesas)
Preliminary Datasheet RJP1CS04DWT/RJP1CS04DWA 1250V - 50A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat.

RJP1CS05DWA - IGBT (Renesas)
Preliminary Datasheet RJP1CS05DWT/RJP1CS05DWA 1250V - 75A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat.

RJP1CS05DWT - IGBT (Renesas)
Preliminary Datasheet RJP1CS05DWT/RJP1CS05DWA 1250V - 75A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat.

RJP1CS06DWA - IGBT (Renesas)
Preliminary Datasheet RJP1CS06DWT/RJP1CS06DWA Silicon N Channel IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE.

RJP1CS06DWT - IGBT (Renesas)
Preliminary Datasheet RJP1CS06DWT/RJP1CS06DWA Silicon N Channel IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE.

RJP1CS08DWA - IGBT (Renesas)
Preliminary Datasheet RJP1CS08DWT/RJP1CS08DWA 1250V - 200A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sa.