Part number:
RJP1CS07DWT
Manufacturer:
File Size:
129.46 KB
Description:
Igbt.
* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 150 A, VGE = 15 V, Ta = 25C)
* High speed switching
* Short circuit withstands time (10 s min.) R07DS0830EJ0003 Rev.0.03 Jul 05, 2012 Outline Die: RJP1CS07DWT-80 2 C Wafer: RJP1CS07DWA-80 3 2 3 1G 1 3 E
RJP1CS07DWT Datasheet (129.46 KB)
RJP1CS07DWT
129.46 KB
Igbt.
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