RJP65T43DPM High Speed Switching IGBT

Renesas

RJP65T43DPM Description

Datasheet RJP65T43DPM 650V - 20A - IGBT High Speed Switching R07DS1201EJ0200 Rev.2.00 Dec.01.2020 .

RJP65T43DPM Features

* Trench gate and thin wafer technology (G7H series)
* Isolated package
* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25 C)
* High speed switching tf = 28 ns typ. (at VCC = 400 V, VGE = 15 V, IC = 20 A, Rg = 10 , Ta = 25 C)

RJP65T43DPM Applications

* PFC
* Quality grade: Standard Key Performance Type RJP65T43DPM VCES 650 V IC 20 A VCE(sat), TC=25°C 1.8 V Tj 175 C Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C 123 1. Gate G 2. Collector 3. Emitter E R07DS1201EJ0200 Rev.2.00 Dec.01.2020 Page 1 of 8 RJP65T

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Datasheet Details

Part number: RJP65T43DPM
Manufacturer: Renesas ↗
File Size: 151.54 KB
Datasheet: RJP65T43DPM-Renesas.pdf
Description: High Speed Switching IGBT

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