Datasheet4U Logo Datasheet4U.com

RJP65T43DPM Datasheet - Renesas

RJP65T43DPM High Speed Switching IGBT

RJP65T43DPM Features

* Trench gate and thin wafer technology (G7H series)

* Isolated package

* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25 C)

* High speed switching tf = 28 ns typ. (at VCC = 400 V, VGE = 15 V, IC = 20 A, Rg = 10 , Ta = 25 C)

RJP65T43DPM Datasheet (151.54 KB)

Preview of RJP65T43DPM PDF
RJP65T43DPM Datasheet Preview Page 2 RJP65T43DPM Datasheet Preview Page 3

Datasheet Details

Part number:

RJP65T43DPM

Manufacturer:

Renesas ↗

File Size:

151.54 KB

Description:

High speed switching igbt.

📁 Related Datasheet

RJP65S03DWA IGBT (Renesas)

RJP65S03DWT IGBT (Renesas)

RJP65S05DWA IGBT (Renesas)

RJP65S05DWT IGBT (Renesas)

RJP65S06DWA IGBT (Renesas)

RJP65S06DWT IGBT (Renesas)

RJP65S07DWA IGBT (Renesas)

RJP65S07DWT IGBT (Renesas)

TAGS

RJP65T43DPM High Speed Switching IGBT Renesas

RJP65T43DPM Distributor