RJP65T43DPM Datasheet - Renesas

RJP65T43DPM High Speed Switching IGBT

RJP65T43DPM Features

* Trench gate and thin wafer technology (G7H series)

* Isolated package

* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25 C)

* High speed switching tf = 28 ns typ. (at VCC = 400 V, VGE = 15 V, IC = 20 A, Rg = 10 , Ta = 25 C)

Datasheet Details

RJP65T43DPM

151.54 KB

High speed switching igbt.

RJP65T43DPM Distributor

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RJP65T43DPM RJP65T43DPM High Speed Switching IGBT Renesas