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RJP65T43DPM Datasheet - Renesas

High Speed Switching IGBT

RJP65T43DPM Features

* Trench gate and thin wafer technology (G7H series)

* Isolated package

* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25 C)

* High speed switching tf = 28 ns typ. (at VCC = 400 V, VGE = 15 V, IC = 20 A, Rg = 10 , Ta = 25 C)

RJP65T43DPM Datasheet (151.54 KB)

Preview of RJP65T43DPM PDF

Datasheet Details

Part number:

RJP65T43DPM

Manufacturer:

Renesas ↗

File Size:

151.54 KB

Description:

High speed switching igbt.

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RJP65T43DPM High Speed Switching IGBT Renesas

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