Part number:
RJP65T43DPM
Manufacturer:
File Size:
151.54 KB
Description:
High speed switching igbt.
* Trench gate and thin wafer technology (G7H series)
* Isolated package
* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25 C)
* High speed switching tf = 28 ns typ. (at VCC = 400 V, VGE = 15 V, IC = 20 A, Rg = 10 , Ta = 25 C)
RJP65T43DPM Datasheet (151.54 KB)
RJP65T43DPM
151.54 KB
High speed switching igbt.
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