RJP65T43DPM - High Speed Switching IGBT

Product Overview

Renesas

Part number	RJP65T43DPM
Manufacturer	Renesas
File Size	151.54 KB
Description	High Speed Switching IGBT
Datasheet	RJP65T43DPM Datasheet
Additional preview pages of the RJP65T43DPM datasheet.

Trench gate and thin wafer technology (G7H series).
Isolated package.
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25 C).
High speed switching tf = 28 ns typ. (at VCC = 400 V, VGE = 15 V, IC = 20 A, Rg = 10 , Ta = 25 C).
Operation frequency (20 kHz ≤ f ≤ 100kHz).
Not guarantee short circuit withstand time.

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Published: Feb 22, 2025 |