RJP60D0DPP-M0 Datasheet, Igbt, Renesas Technology

RJP60D0DPP-M0 Features

• Igbt
• Short circuit withstand time (5 s typ.)
• Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)
• Gate to emitt

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RJP60D0DPP-M0

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Renesas ↗ Technology

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📄 Datasheet

Description:

Silicon n-channel igbt. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

RJP60D0DPP-M0 Application

• Applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and t

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RJP60D0DPP-M0

Renesas Technology

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