Datasheet4U Logo Datasheet4U.com

RJP60D0DPP-M0 Datasheet - Renesas Technology

RJP60D0DPP-M0_RenesasTechnology.pdf

Preview of RJP60D0DPP-M0 PDF
RJP60D0DPP-M0 Datasheet Preview Page 2 RJP60D0DPP-M0 Datasheet Preview Page 3

Datasheet Details

Part number:

RJP60D0DPP-M0

Manufacturer:

Renesas ↗ Technology

File Size:

97.19 KB

Description:

Silicon n-channel igbt.

RJP60D0DPP-M0, Silicon N-Channel IGBT

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Renesa

RJP60D0DPP-M0 Features

* Short circuit withstand time (5 s typ.)

* Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)

* Gate to emitter voltage rating 30 V

* Pb-free lead plating and chip bonding R07DS0173EJ0100 Rev.1.00 Mar 11, 2011 Outline RENESAS Pack

📁 Related Datasheet

📌 All Tags

Renesas Technology RJP60D0DPP-M0-like datasheet