RJP60D0DPP-M0 Datasheet (Renesas Technology)

RJP60D0DPP-M0, Silicon N-Channel IGBT

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Renesa

RJP60D0DPP-M0 Features

* Short circuit withstand time (5 s typ.)

* Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)

* Gate to emitter voltage rating 30 V

* Pb-free lead plating and chip bonding R07DS0173EJ0100 Rev.1.00 Mar 11, 2011 Outline RENESAS Pack