RJP60D0DPP-M0 - Silicon N-Channel IGBT

Renesas Technology

RJP60D0DPP-M0 Datasheet Preview — Preview of RJP60D0DPP-M0 PDF

Datasheet Details

Part number	RJP60D0DPP-M0
Manufacturer	Renesas ↗ Technology
File Size	97.19 KB
Description	Silicon N-Channel IGBT
Datasheet	RJP60D0DPP-M0_RenesasTechnology.pdf

RJP60D0DPP-M0 Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Short circuit withstand time (5 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C).
Gate to emitter voltage rating 30 V.
Pb-free lead plating and chip bonding R07DS0173EJ0100 Rev.1.00 Mar 11, 2011 Outline.

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Published: Aug 8, 2011 |