RJP60D0DPP-M0

Silicon N-Channel IGBT

Renesas Technology

RJP60D0DPP-M0 Features

* Short circuit withstand time (5 s typ.)

* Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)

* Gate to emitter voltage rating 30 V

* Pb-free lead plating and chip bonding R07DS0173EJ0100 Rev.1.00 Mar 11, 2011 Outline RENESAS Pack

RJP60D0DPP-M0 General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJP60D0DPP-M0 Datasheet (97.19 KB)