RJP6065DPM Datasheet, igbt equivalent, Renesas

RJP6065DPM Features

• Igbt
• Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)
• Gate to emitter voltage rating 30 V
• Pb-free lead plati

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Part number:

RJP6065DPM

Manufacturer:

Renesas ↗

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📄 Datasheet

Description:

N-channel igbt. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

RJP6065DPM Application

• Applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and t

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RJP6065DPM

Renesas

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