RJP6065DPM

N-Channel IGBT

Renesas

RJP6065DPM Features

* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)

* Gate to emitter voltage rating 30 V

* Pb-free lead plating and chip bonding R07DS0204EJ0100 Rev.1.00 Nov 19, 2010 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C

RJP6065DPM General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJP6065DPM Datasheet (144.17 KB)