RJP6065DPM - N-Channel IGBT

Renesas

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Datasheet Details

Part number	RJP6065DPM
Manufacturer	Renesas ↗
File Size	144.17 KB
Description	N-Channel IGBT
Datasheet	RJP6065DPM_Renesas.pdf

RJP6065DPM Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C).
Gate to emitter voltage rating 30 V.
Pb-free lead plating and chip bonding R07DS0204EJ0100 Rev.1.00 Nov 19, 2010 Outline.

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Published: May 2, 2012 |