RJP60F4DPM Datasheet (Renesas)

RJP60F4DPM, N-Channel IGBT

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Renesa

RJP60F4DPM Features

* Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)

* Trench gate and thin wafer technology

* High speed switching R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C G 1. Gate