RJP60F4DPM N-Channel IGBT

Renesas

Description

Preliminary Datasheet RJP60F4DPM 600 V - 30 A - IGBT High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

📥 Download Datasheet

RJP60F4DPM Datasheet Preview — Preview of RJP60F4DPM PDF

Datasheet Specifications

Part number: RJP60F4DPM
Manufacturer: Renesas ↗
File Size: 140.50 KB
Datasheet: RJP60F4DPM_Renesas.pdf
Description: N-Channel IGBT

Features

* Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)
* Trench gate and thin wafer technology
* High speed switching R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C G 1. Gate

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

RJP60F4DPM Distributors

📁 Related Datasheet

RJP6085DPK RJP6085DPN RJP60D0DPP-M0 RJP020N06 RJP020N06FRA RJP020N06T100

📌 All Tags

RJP60F4DPM N-Channel IGBT Renesas

Renesas RJP60F4DPM-like datasheet