RJP60F4DPM Datasheet, Igbt, Renesas

RJP60F4DPM Features

  • Igbt
  • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)
  • Trench gate and thin wafer technology
  • High speed swi

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Part number:

RJP60F4DPM

Manufacturer:

Renesas ↗

File Size:

140.50kb

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📄 Datasheet

Description:

N-channel igbt. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

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RJP60F4DPM Application

  • Applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and t

TAGS

RJP60F4DPM
N-Channel
IGBT
Renesas

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Stock and price

part
Renesas Electronics Corporation
IGBT TRENCH 600V 60A TO-3PFM
DigiKey
RJP60F4DPM-00-T1
78 In Stock
Qty : 10 units
Unit Price : $3.85
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