RJP60F7DPK Datasheet, Igbt, Renesas

RJP60F7DPK Features

• Igbt
• Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
• Trench gate and thin wafer technology
• High speed s

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Part number:

RJP60F7DPK

Manufacturer:

Renesas ↗

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200.97kb

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📄 Datasheet

Description:

Igbt.

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RJP60F7DPK

Renesas

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