RJP60F7DPK IGBT

Renesas

Description

Preliminary Datasheet RJP60F7DPK 600V - 50A - IGBT High Speed Power Switching R07DS1001EJ0100 Rev.1.00 Jan 22, 2013 .

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Datasheet Specifications

Part number: RJP60F7DPK
Manufacturer: Renesas ↗
File Size: 200.97 KB
Datasheet: RJP60F7DPK-Renesas.pdf
Description: IGBT

Features

* Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
* Trench gate and thin wafer technology
* High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Package

RJP60F7DPK Distributors

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RJP60F7DPK IGBT Renesas

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