Datasheet4U Logo Datasheet4U.com

RJP60F7DPK Datasheet - Renesas

RJP60F7DPK IGBT

RJP60F7DPK Features

* Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)

* Trench gate and thin wafer technology

* High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Package

RJP60F7DPK-Renesas.pdf

Preview of RJP60F7DPK PDF
RJP60F7DPK Datasheet Preview Page 2 RJP60F7DPK Datasheet Preview Page 3

Datasheet Details

Part number:

RJP60F7DPK

Manufacturer:

Renesas ↗

File Size:

200.97 KB

Description:

Igbt.

📁 Related Datasheet

RJP60F0DPE N-Channel IGBT (Renesas)

RJP60F0DPM N-Channel IGBT (Renesas)

RJP60F4DPM N-Channel IGBT (Renesas)

RJP60F5DPM N-Channel IGBT (Renesas)

RJP6065DPM N-Channel IGBT (Renesas)

RJP6085DPK Silicon N-Channel IGBT (Renesas Technology)

RJP6085DPN Silicon N-Channel IGBT (Renesas Technology)

RJP60D0DPE N-Channel IGBT (Renesas)

TAGS

RJP60F7DPK RJP60F7DPK IGBT Renesas

RJP60F7DPK Distributor