RJP60F7DPK

IGBT

Renesas

* Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)

* Trench gate and thin wafer technology

* High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Package

RJP60F7DPK

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Igbt.

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RJP60F7DPK IGBT Renesas

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