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RJP60F7DPK - IGBT

Renesas

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Datasheet Details

Part number	RJP60F7DPK
Manufacturer	Renesas ↗
File Size	200.97 KB
Description	IGBT
Datasheet	RJP60F7DPK-Renesas.pdf

RJP60F7DPK Product details

Features

Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C).
Trench gate and thin wafer technology.
High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) Outline.

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Published: Aug 5, 2020 |