RJP60F0DPM Datasheet, Igbt, Renesas

RJP60F0DPM Features

• Igbt
• Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)
• Trench gate and thin wafer technology
• High speed sw

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RJP60F0DPM

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Renesas ↗

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📄 Datasheet

Description:

N-channel igbt. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

RJP60F0DPM Application

• Applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and t

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RJP60F0DPM

Renesas

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