RJP60F0DPM

N-Channel IGBT

Renesas

RJP60F0DPM Features

* Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)

* Trench gate and thin wafer technology

* High speed switching R07DS0585EJ0100 Rev.1.00 Nov 25, 2011 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C G 1. Gate

RJP60F0DPM General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJP60F0DPM Datasheet (140.96 KB)