RJP60F0DPE Datasheet - Renesas

RJP60F0DPE N-Channel IGBT

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RJP60F0DPE Features

* Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)

* Trench gate and thin wafer technology

* High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0540EJ0100 Rev.1.00 Se

RJP60F0DPE_Renesas.pdf