RJP60F0DPE N-Channel IGBT

Renesas

Description

Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: RJP60F0DPE
Manufacturer: Renesas ↗
File Size: 142.80 KB
Datasheet: RJP60F0DPE_Renesas.pdf
Description: N-Channel IGBT

Features

* Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)
* Trench gate and thin wafer technology
* High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0540EJ0100 Rev.1.00 Se

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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RJP60F0DPE N-Channel IGBT Renesas

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