RJP60F0DPE - N-Channel IGBT

Renesas

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Datasheet Details

Part number	RJP60F0DPE
Manufacturer	Renesas ↗
File Size	142.80 KB
Description	N-Channel IGBT
Datasheet	RJP60F0DPE_Renesas.pdf

RJP60F0DPE Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C).
Trench gate and thin wafer technology.
High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0540EJ0100 Rev.1.00 Sep 09, 2011 Outline.

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Published: May 2, 2012 |