RJP60D0DPE - N-Channel IGBT

Renesas

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Datasheet Details

Part number	RJP60D0DPE
Manufacturer	Renesas ↗
File Size	137.11 KB
Description	N-Channel IGBT
Datasheet	RJP60D0DPE_Renesas.pdf

RJP60D0DPE Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Short circuit withstand time (5 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C).
Gate to emitter voltage rating 30 V.
Pb-free lead plating and chip bonding R07DS0172EJ0100 Rev.1.00 Nov 15, 2010 Outline.

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Published: May 2, 2012 |