Part number:
RJP60D0DPE
Manufacturer:
File Size:
137.11 KB
Description:
N-channel igbt.
* Short circuit withstand time (5 s typ.)
* Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)
* Gate to emitter voltage rating 30 V
* Pb-free lead plating and chip bonding R07DS0172EJ0100 Rev.1.00 Nov 15, 2010 Outline RENESAS Pack
RJP60D0DPE Datasheet (137.11 KB)
RJP60D0DPE
137.11 KB
N-channel igbt.
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