RJP60D0DPE Datasheet, Igbt, Renesas

RJP60D0DPE Features

  • Igbt
  • Short circuit withstand time (5 s typ.)
  • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)
  • Gate to emitt

PDF File Details

Part number:

RJP60D0DPE

Manufacturer:

Renesas ↗

File Size:

137.11kb

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📄 Datasheet

Description:

N-channel igbt. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

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RJP60D0DPE Application

  • Applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and t

TAGS

RJP60D0DPE
N-Channel
IGBT
Renesas

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Stock and price

part
Renesas Electronics Corporation
IGBT 600V 45A LDPAK
DigiKey
RJP60D0DPE-00-J3
21 In Stock
Qty : 10 units
Unit Price : $2.38
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