RJP60D0DPK

Silicon N-Channel IGBT

Renesas

RJP60D0DPK Features

* Short circuit withstand time (5 s typ.)

* Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)

* Gate to emitter voltage rating 30 V

* Pb-free lead plating and chip bonding R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Outline RENESAS Pack

RJP60D0DPK General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJP60D0DPK Datasheet (139.62 KB)