RJP60D0DPK Silicon N-Channel IGBT

Renesas

Description

Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: RJP60D0DPK
Manufacturer: Renesas ↗
File Size: 139.62 KB
Datasheet: RJP60D0DPK_Renesas.pdf
Description: Silicon N-Channel IGBT

Features

* Short circuit withstand time (5 s typ. )
* Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)
* Gate to emitter voltage rating 30 V
* Pb-free lead plating and chip bonding R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Outline RENESAS Pack

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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RJP60D0DPK Silicon N-Channel IGBT Renesas

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