RJP60F5DPM Datasheet (Renesas)

RJP60F5DPM, N-Channel IGBT

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Renesa

RJP60F5DPM Features

* Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)

* Trench gate and thin wafer technology

* High speed switching R07DS0587EJ0100 Rev.1.00 Nov 25, 2011 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C G 1. Gate 2