Part number:
RJP60F5DPM
Manufacturer:
File Size:
141.97 KB
Description:
N-channel igbt.
* Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
* Trench gate and thin wafer technology
* High speed switching R07DS0587EJ0100 Rev.1.00 Nov 25, 2011 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C G 1. Gate 2
RJP60F5DPM Datasheet (141.97 KB)
RJP60F5DPM
141.97 KB
N-channel igbt.
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