RJP60F5DPM
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N-channel igbt. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor
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RJP60F0DPE - N-Channel IGBT
(Renesas)
Preliminary Datasheet
RJP60F0DPE
600 V - 25 A - IGBT High Speed Power Switching
Features
Low collector to emitter saturation voltage VCE(sat) = 1.4.
RJP60F0DPM - N-Channel IGBT
(Renesas)
Preliminary Datasheet
RJP60F0DPM
600 V - 25 A - IGBT High Speed Power Switching
Features
Low collector to emitter saturation voltage VCE(sat) = 1.4.
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Low collector to emitter saturation voltage VCE(sat) = 1.4.
RJP60F7DPK - IGBT
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Preliminary Datasheet
RJP60F7DPK
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R07DS1001EJ0100 Rev.1.00
Jan 22, 2013
Features
Low collector to em.
RJP6065DPM - N-Channel IGBT
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Preliminary Datasheet
RJP6065DPM
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Low collector to emitter saturation voltage VCE(sat) = .
RJP6085DPK - Silicon N-Channel IGBT
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..
RJP6085DPK
Silicon N Channel IGBT High Speed Power Switching
Features
• High speed switching • Low collector to emitter saturatio.
RJP6085DPN - Silicon N-Channel IGBT
(Renesas Technology)
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RJP6085DPN
Silicon N Channel IGBT High Speed Power Switching
Features
• High speed switching • Low collector to emitter saturatio.
RJP60D0DPE - N-Channel IGBT
(Renesas)
Preliminary Datasheet
RJP60D0DPE
Silicon N Channel IGBT High Speed Power Switching
Features
Short circuit withstand time (5 s typ.) Low collecto.
RJP60D0DPK - Silicon N-Channel IGBT
(Renesas)
Preliminary Datasheet
RJP60D0DPK
Silicon N Channel IGBT High Speed Power Switching
Features
Short circuit withstand time (5 s typ.) Low collecto.
RJP60D0DPM - N-Channel IGBT
(Renesas)
Preliminary Datasheet
RJP60D0DPM
Silicon N Channel IGBT High Speed Power Switching
Features
Short circuit withstand time (5 s typ.) Low collecto.