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RJP65S03DWA, RJP65S03DWT IGBT

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Description

Preliminary Datasheet RJP65S03DWT/RJP65S03DWA 650V - 30A - IGBT Application: Inverter .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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This datasheet PDF includes multiple part numbers: RJP65S03DWA, RJP65S03DWT. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
RJP65S03DWA, RJP65S03DWT
Manufacturer
Renesas ↗
File Size
130.58 KB
Datasheet
RJP65S03DWT_Renesas.pdf
Description
IGBT
Note
This datasheet PDF includes multiple part numbers: RJP65S03DWA, RJP65S03DWT.
Please refer to the document for exact specifications by model.

Features

* Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C)
* High speed Switching
* Short circuit withstands time (10 s min. ) R07DS0820EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP65S03DWT-80 2 C 3 1G 1 2 Wafer: RJP65S03DWA-80 1. Gate 2

Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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