RJP65S05DWA Datasheet, Igbt, Renesas

PDF File Details

Renesas manufacturer logo

RJP65S05DWA

128.30 KB

Igbt. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25C)
High speed Switching
Short circuit withstands time (10 s mi

for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard":

📁 Related Datasheet

RJP65S05DWT - IGBT (Renesas)

RJP65S03DWA - IGBT (Renesas)

RJP65S03DWT - IGBT (Renesas)

RJP65S06DWA - IGBT (Renesas)

RJP65S06DWT - IGBT (Renesas)

RJP65S07DWA - IGBT (Renesas)

RJP65S07DWT - IGBT (Renesas)

RJP65S08DWA - IGBT (Renesas)

TAGS

RJP65S05DWA IGBT Renesas