RJP65S07DWA Datasheet, Igbt, Renesas

✔ RJP65S07DWA Features

Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 150 A, VGE = 15 V, Ta = 25C)
High speed Switching
Short circuit withstands time (10 s m

✔ RJP65S07DWA Application

for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard":

PDF File Details

Renesas manufacturer logo

Part number:

RJP65S07DWA

Manufacturer:

Renesas ↗

File Size:

128.35kb

Download:

📄 Datasheet

Description:

Igbt. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

📥 Download PDF (128.35kb)

📁 Related Datasheet

RJP65S07DWT - IGBT (Renesas)
Preliminary Datasheet RJP65S07DWT/RJP65S07DWA 650V - 150A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat.

RJP65S03DWA - IGBT (Renesas)
Preliminary Datasheet RJP65S03DWT/RJP65S03DWA 650V - 30A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat).

RJP65S03DWT - IGBT (Renesas)
Preliminary Datasheet RJP65S03DWT/RJP65S03DWA 650V - 30A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat).

RJP65S05DWA - IGBT (Renesas)
Preliminary Datasheet RJP65S05DWT/RJP65S05DWA 650V - 75A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat).

RJP65S05DWT - IGBT (Renesas)
Preliminary Datasheet RJP65S05DWT/RJP65S05DWA 650V - 75A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat).

RJP65S06DWA - IGBT (Renesas)
Preliminary Datasheet RJP65S06DWT/RJP65S06DWA 650V - 100A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat.

RJP65S06DWT - IGBT (Renesas)
Preliminary Datasheet RJP65S06DWT/RJP65S06DWA 650V - 100A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat.

RJP65S08DWA - IGBT (Renesas)
Preliminary Datasheet RJP65S08DWT/RJP65S08DWA 650V - 200A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat.

RJP65S08DWT - IGBT (Renesas)
Preliminary Datasheet RJP65S08DWT/RJP65S08DWA 650V - 200A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat.

RJP65T43DPM - High Speed Switching IGBT (Renesas)
Datasheet RJP65T43DPM 650V - 20A - IGBT High Speed Switching R07DS1201EJ0200 Rev.2.00 Dec.01.2020 Features  Trench gate and thin wafer technology .

Stock and price

Renesas Electronics Corporation

RENRJP65S07DWA-85#W0 IGBT TRENCH G7H (Alt: RJP65S07DWA-85#W0)

Avnet Asia

RJP65S07DWA-85#W0

0 In Stock

Unit Price : $0

TAGS

RJP65S07DWA IGBT Renesas