RJP65S07DWT Datasheet, Igbt, Renesas

✔ RJP65S07DWT Features

Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 150 A, VGE = 15 V, Ta = 25C)
High speed Switching
Short circuit withstands time (10 s m

✔ RJP65S07DWT Application

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RJP65S07DWT

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📄 Datasheet

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Igbt. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

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📁 Related Datasheet

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RJP65S07DWT IGBT Renesas