TBB1008 Datasheet - Renesas

TBB1008, Twin Built in Biasing Circuit MOS FET IC

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.Th.

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Datasheet Details

Part number:

TBB1008

Manufacturer:

Renesas ↗

File Size:

288.12 KB

Description:

Twin Built in Biasing Circuit MOS FET IC

Features

* Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
* Suitable for World Standard Tuner RF amplifier.
* Very useful for total tuner cost reduction.
* Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at

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