TBB1008 Datasheet - Renesas

TBB1008 Twin Built in Biasing Circuit MOS FET IC

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other H.

TBB1008 Features

* Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

* Suitable for World Standard Tuner RF amplifier.

* Very useful for total tuner cost reduction.

* Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at

TBB1008 Datasheet (288.12 KB)