UPA2821T1L

MOS FIELD EFFECT TRANSISTOR

Renesas

* VDSS = 30 V (TA = 25°C)

* Low on-state resistance ⎯ RDS(on) = 3.8 mΩ MAX. (VGS = 10 V, ID = 26 A)

* 4.5 V Gate-drive available

* Small surface mount package (8-pin HVSON (3333))

* Pb-free, Halogen Free Ordering Information Part No. Lead Plating Packing

UPA2821T1L

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Mos field effect transistor.

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UPA2821T1L MOS FIELD EFFECT TRANSISTOR Renesas

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