UPA2821T1L MOS FIELD EFFECT TRANSISTOR

Renesas

Description

μPA2821T1L MOS FIELD EFFECT TRANSISTOR PreliminaryData Sheet R07DS0753EJ0100 Rev.1.00 May 25, 2012 .
The μPA2821T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery prot.

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Datasheet Specifications

Part number: UPA2821T1L
Manufacturer: Renesas ↗
File Size: 138.53 KB
Datasheet: UPA2821T1L-Renesas.pdf
Description: MOS FIELD EFFECT TRANSISTOR

Features

* VDSS = 30 V (TA = 25°C)
* Low on-state resistance ⎯ RDS(on) = 3.8 mΩ MAX. (VGS = 10 V, ID = 26 A)
* 4.5 V Gate-drive available
* Small surface mount package (8-pin HVSON (3333))
* Pb-free, Halogen Free Ordering Information Part No. Lead Plating Packing

UPA2821T1L Distributors

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UPA2821T1L MOS FIELD EFFECT TRANSISTOR Renesas

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