UPA2821T1L - MOS FIELD EFFECT TRANSISTOR

Product Overview

Renesas

Datasheet Details

Part number	UPA2821T1L
Manufacturer	Renesas
File Size	138.53 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	UPA2821T1L Datasheet
Additional preview pages of the UPA2821T1L datasheet.

Product details

Description

The μPA2821T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit.

Features

VDSS = 30 V (TA = 25°C).
Low on-state resistance ⎯ RDS(on) = 3.8 mΩ MAX. (VGS = 10 V, ID = 26 A).
4.5 V Gate-drive available.
Small surface mount package (8-pin HVSON (3333)).
Pb-free, Halogen Free Ordering Information Part No. Lead Plating Packing Package μPA2821T1L-E1-AT ∗1 Pure Sn (Tin) Tape 3000 p/reel 8-pin HVSON (3333) μPA2821T1L-E2-AT ∗1 typ. 0.028 g Note: ∗1. Pb-free (This product does not contain Pb in external electrode and other.

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Published: Aug 3, 2015 |