UPA2826T1S Datasheet, Mosfet, Renesas

UPA2826T1S Features

  • Mosfet
  • VDSS = 20 V (TA = 25°C)
  • Low on-state resistance ⎯ RDS(on) = 4.3 mΩ MAX. (VGS = 8.0 V, ID = 13.5 A)
  • 2.5 V Gate-drive available
  • Small & thin type s

PDF File Details

Part number:

UPA2826T1S

Manufacturer:

Renesas ↗

File Size:

232.65kb

Download:

📄 Datasheet

Description:

N-channel mosfet. The μ PA2826T1S is N-channel MOS Field Effect Transistor designed for power management applications of portable equipment . R07DS0989

Datasheet Preview: UPA2826T1S 📥 Download PDF (232.65kb)
Page 2 of UPA2826T1S Page 3 of UPA2826T1S

UPA2826T1S Application

  • Applications of portable equipment . R07DS0989EJ0100 Rev.1.00 Dec 25, 2012 Features
  • VDSS = 20 V (TA = 25°C)
  • Low on-state resist

TAGS

UPA2826T1S
N-channel
MOSFET
Renesas

📁 Related Datasheet

UPA2821T1L - MOS FIELD EFFECT TRANSISTOR (Renesas)
μPA2821T1L MOS FIELD EFFECT TRANSISTOR PreliminaryData Sheet R07DS0753EJ0100 Rev.1.00 May 25, 2012 Description The μPA2821T1L is N-channel MOS Field.

UPA2806 - MOS FIELD EFFECT TRANSISTOR (Renesas)
Preliminary Data Sheet μ PA2806 MOS FIELD EFFECT TRANSISTOR Description R07DS0008EJ0100 Rev.1.00 June 01, 2010 The μ PA2806 is N-channel MOSFET des.

UPA2810 - MOS FIELD EFFECT TRANSISTOR (Renesas)
DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2810 SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The μ PA2810 is P-channel MOSFET designed for DC/DC conv.

UPA2811T1L - MOS FIELD EFFECT TRANSISTOR (Renesas)
Preliminary Data Sheet μ PA2811T1L MOS FIELD EFFECT TRANSISTOR Description R07DS0191EJ0100 Rev.1.00 Jan 11, 2011 The μ PA2811T1L is P-channel MOS F.

UPA2812T1L - P-channel MOSFEF (Renesas)
Data Sheet μPA2812T1L P-channel MOSFEF –30 V, –30 A, 4.8 mΩ Description The μPA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC co.

UPA2813T1L - P-channel MOSFEF (Renesas)
Data Sheet μPA2813T1L P-channel MOSFET –30 V, –27 A, 6.2 mΩ Description The μPA2813T1L is P-channel MOS Field Effect Transistor designed for DC/DC co.

UPA2814T1S - P-channel MOSFEF (Renesas)
Data Sheet μPA2814T1S P-channel MOSFET –30 V, –24 A, 7.8 mΩ Description The μPA2814T1S is P-channel MOS Field Effect Transistor designed for DC/DC co.

UPA2815T1S - P-channel MOSFEF (Renesas)
Data Sheet μPA2815T1S P-channel MOSFET –30 V, –21 A, 11 mΩ Description The μPA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC con.

UPA2816T1S - P-channel MOSFEF (Renesas)
Data Sheet μPA2816T1S P-channel MOSFET –30 V, –17 A, 15.5 mΩ Description The μPA2816T1S is P-channel MOS Field Effect Transistor designed for DC/DC c.

UPA2001C - NPN Silicon Epitaxial Darlington Transistor Array (NEC)
.

Stock and price

Renesas Electronics Corporation
8P HWSON
DigiKey
UPA2826T1S-E2-AT
4754 In Stock
Qty : 2000 units
Unit Price : $0.76
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts