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H5N5012P Silicon N Channel MOS FET High Speed Power Switching

H5N5012P Description

H5N5012P Silicon N Channel MOS FET High Speed Power Switching REJ03G0378-0200Z Rev.2.00 Jun.17.2004 .

H5N5012P Features

* Low on-resistance
* Low leakage current www. DataSheet4U. com
* High speed switching
* Built-in fast recovery diode Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source v

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Silicon Channel MOS FET High Speed Power Switching Renesas Technology
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